Ürün ayrıntıları:
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Yerleşik RF: | 1 GΩ ve CF = 5 PF | Işık yayan yüzey: | 2,4 × 2,4 mm |
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Paketi: | Metal | Soğutma: | Soğutma Tipi |
Spektral tepki aralığı: | 190 ila 1100 Nm | Maksimum duyarlılık dalga boyu: | 960 deniz mili |
Gürültü eşdeğer gücü: | 11.0 × 10-15 w/hz1/2 | Eşdeğer güç:: | 10Hz |
Vurgulamak: | silicon photodiodes with preamplifier,low-light measurement photodiodes,infrared photoelectric sensor diodes |
Product Description:
YJJ S8745-01 S8746-01 Silicon Photodiodes With Preamplifier Are Used For Low-Light Measurement
Features:
photodiode and the preamplifier are integrated with feedback resistors and capacitors.
This is a low-noise sensor, consisting of a silicon photodiode, an operational amplifier, feedback resistors and capacitors, all integrated into a small package. By simply connecting it to the power supply, it can be used for low-light measurement, such as in analytical instruments and measuring devices. The light-receiving surface of the photodiode is internally connected to the GND terminal, making it highly resistant to EMC noise.
Characteristics
- Use low-power FET input operational amplifier
- Built-in Rf = 1 GΩ and Cf = 5 pF
- Achieve variable gain through external connected resistors
- Low noise, low NEP
- Encapsulated with shielding effect
- Highly resistant to EMC noise Detailed parameters
Light-emitting surface: 2.4 × 2.4 mm
Package: Metal
Package type: TO-5
Cooling: Non-cooling type
Reverse voltage (maximum value): 20 V
Spectral response range: 190 to 1100 nm
Maximum sensitivity wavelength (typical value): 960 nm
Noise equivalent power (typical value): 11.0 × 10-15 W/Hz1/2
Measurement conditions: Typical values: Ta = 25°C, VCC = ±15V, RL = 1MΩ, Photographic sensitivity: λ = λp, Noise equivalent power: λ = λp, f = 10Hz, unless otherwise specified
Specifications:
Package type | TO-5 |
Cooling | Non-cooling type |
Product features | Low pressure differential |
Reverse voltage (maximum value) | 20V |
İlgili kişi: Miss. Xu
Tel: 86+13352990255